Parametric results for: IRFP150N under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, FAST SWITCHING 2 AVALANCHE RATED, HIGH RELIABILITY 2

6 hits Apply

420.0 mJ 4

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 6

6 hits Apply

Drain Current-Max (ID) (2)

42 A 4 44 A 2

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (2)

30 mΩ 2 36 mΩ 4

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-247 2 TO-247AC 4

6 hits Apply

R-PSFM-T3 6

6 hits Apply

e0 4 e3 2

6 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 1 Infineon Technologies AG 2 International Rectifier 2 Intersil Corporation 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 6

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

Active 2 Obsolete 1 Transferred 3

6 hits Apply

Yes 1

6 hits Apply

225 2 250 1 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

140 W 3

6 hits Apply

140 W 3 155 W 2

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply