Parametric results for: IRFP22N50A under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

1180.0 mJ 5

6 hits Apply

DRAIN 4

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

500 V 5

6 hits Apply

Drain Current-Max (ID) (1)

22 A 5

6 hits Apply

Drain-source On Resistance-Max (1)

230 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

27 pF 2

6 hits Apply

TO-247AC 5

6 hits Apply

R-PSFM-T3 5

6 hits Apply

e0 1 e3 2

6 hits Apply

Manufacturer (4)

Infineon Technologies AG 2 International Rectifier 2 Vishay Intertechnologies 1 Vishay Siliconix 1

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

3 5

6 hits Apply

ENHANCEMENT MODE 5

6 hits Apply

150.0 °C 5

6 hits Apply

-55.0 °C 2

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

FLANGE MOUNT 5

6 hits Apply

Active 1 Obsolete 2 Transferred 3

6 hits Apply

No 1 Yes 2

6 hits Apply

260 2 NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

6 hits Apply

277 W 4

6 hits Apply

Surface Mount (1)

NO 5

6 hits Apply