Parametric results for: IRFP350LC under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

6 hits Apply

390.0 mJ 3

6 hits Apply

DRAIN 4

6 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

400 V 6

6 hits Apply

Drain Current-Max (ID) (2)

16 A 3 18 A 3

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-247 2 TO-247AC 4

6 hits Apply

R-PSFM-T3 6

6 hits Apply

e0 3 e3 3

6 hits Apply

Manufacturer (3)

International Rectifier 2 Vishay Intertechnologies 2 Vishay Siliconix 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 5

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

End Of Life 1 Obsolete 1 Transferred 4

6 hits Apply

No 3 Yes 3

6 hits Apply

260 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

190 W 2

6 hits Apply

190 W 3

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply