Parametric results for: IRFP4004 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 2

5 hits Apply

290.0 mJ 4

5 hits Apply

DRAIN 4

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

40 V 4

5 hits Apply

Drain Current-Max (ID) (1)

195 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

1.7 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

TO-247AC 4

5 hits Apply

R-PSFM-T3 4

5 hits Apply

e3 3

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 3 International Rectifier 2

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

175.0 °C 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

FLANGE MOUNT 4

5 hits Apply

End Of Life 2 Obsolete 1 Transferred 2

5 hits Apply

Yes 2

5 hits Apply

NOT SPECIFIED 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

380 W 4

5 hits Apply

Surface Mount (1)

NO 4

5 hits Apply