Findchips: Parametric Search Results for IRFR1205TR


Select Parts		Part Number

		IRFR1205TRPBF Infineon Technologies AG
		IRFR1205TRRPBF Infineon Technologies AG
		IRFR1205TRL International Rectifier
		IRFR1205TRLPBF International Rectifier
		IRFR1205TR International Rectifier
		IRFR1205TRPBF International Rectifier
		IRFR1205TRRPBF International Rectifier
		IRFR1205TRLPBF Infineon Technologies AG

				Most Relevant								Technical								Compliance				Operating Conditions				Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Additional Feature	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Reach Compliance Code	ECCN Code	Samacsys Manufacturer	Part Package Code	Package Description	Pin Count

$0.6700

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

107 W

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

INFINEON TECHNOLOGIES AG

not_compliant

EAR99

Infineon

Check for Price

Yes

Active

260

INFINEON TECHNOLOGIES AG

not_compliant

Infineon

Check for Price

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN LEAD

GULL WING

SINGLE

INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC

unknown

EAR99

TO-252AA

PLASTIC, DPAK-3

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

107 W

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

INTERNATIONAL RECTIFIER CORP

not_compliant

EAR99

TO-252AA

SMALL OUTLINE, R-PSSO-G2

Check for Price

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN LEAD

GULL WING

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

TO-252AA

SMALL OUTLINE, R-PSSO-G2

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

107 W

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

INTERNATIONAL RECTIFIER CORP

not_compliant

EAR99

TO-252AA

LEAD FREE, PLASTIC, DPAK-3

Check for Price

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

107 W

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

INTERNATIONAL RECTIFIER CORP

not_compliant

EAR99

TO-252AA

LEAD FREE, PLASTIC, DPAK-3

Check for Price

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

107 W

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

INFINEON TECHNOLOGIES AG

not_compliant

EAR99

Infineon

SMALL OUTLINE, R-PSSO-G2

Compare

IRFR1205TRPBF

Infineon Technologies AG

$0.6700

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

107 W

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

INFINEON TECHNOLOGIES AG

not_compliant

EAR99

Infineon

IRFR1205TRRPBF

Infineon Technologies AG

Check for Price

Yes

Active

260

INFINEON TECHNOLOGIES AG

not_compliant

Infineon

IRFR1205TRL

International Rectifier

Check for Price

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN LEAD

GULL WING

SINGLE

INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC

unknown

EAR99

TO-252AA

PLASTIC, DPAK-3

IRFR1205TRLPBF

International Rectifier

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

107 W

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

INTERNATIONAL RECTIFIER CORP

not_compliant

EAR99

TO-252AA

SMALL OUTLINE, R-PSSO-G2

IRFR1205TR

International Rectifier

Check for Price

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN LEAD

GULL WING

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

TO-252AA

SMALL OUTLINE, R-PSSO-G2

IRFR1205TRPBF

International Rectifier

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

107 W

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

INTERNATIONAL RECTIFIER CORP

not_compliant

EAR99

TO-252AA

LEAD FREE, PLASTIC, DPAK-3

IRFR1205TRRPBF

International Rectifier

Check for Price

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

107 W

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

INTERNATIONAL RECTIFIER CORP

not_compliant

EAR99

TO-252AA

LEAD FREE, PLASTIC, DPAK-3

IRFR1205TRLPBF

Infineon Technologies AG

Check for Price

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

55 V

20 A

27 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

210 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

107 W

160 A

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

INFINEON TECHNOLOGIES AG

not_compliant

EAR99

Infineon

SMALL OUTLINE, R-PSSO-G2

Parametric results for: IRFR1205TR under Power Field-Effect Transistors