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1 - 7 of 7 results
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IRFR120A
Samsung Semiconductor
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.4 A | 200 mΩ | 141 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 W | 34 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | SAMSUNG SEMICONDUCTOR INC | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | |||||||||||
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IRFR120ATM
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.4 A | 200 mΩ | 141 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 W | 34 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | DPAK-3 | 3 | not_compliant | EAR99 | TO-252 | |||||
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IRFR120A
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.4 A | 200 mΩ | 141 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 W | 34 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | TO-252 | ||||||
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IRFR120ATF
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.4 A | 200 mΩ | 141 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 W | 34 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | SMALL OUTLINE, R-PSSO-G2 | 3 | not_compliant | EAR99 | TO-252 | |||||
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IRFR120ATF
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.4 A | 200 mΩ | 141 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 34 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | COMMERCIAL | 1 | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | DPAK-3 | 3 | unknown | TO-252 | |||||
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IRFR120ATM_NL
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.4 A | 200 mΩ | 141 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 34 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | TO-252 | |||||||||
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IRFR120ATM
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 8.4 A | 200 mΩ | 141 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 34 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | COMMERCIAL | 1 | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | DPAK-3 | 3 | unknown | TO-252 |