Parametric results for: IRFR5410HR under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 1

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194.0 mJ 1

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DRAIN 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

100 V 1

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Drain Current-Max (ID) (1)

13 A 1

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Drain-source On Resistance-Max (1)

205 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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TO-252AA 1

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R-PSSO-G2 1

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e0 1

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Manufacturer (1)

International Rectifier 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

2 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Obsolete 1

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No 1

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Polarity/Channel Type (1)

P-CHANNEL 1

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Surface Mount (1)

YES 1

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