Parametric results for: IRFSL11N50A under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4

4 hits Apply

390.0 mJ 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

500 V 4

4 hits Apply

Drain Current-Max (ID) (1)

11 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

550 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-262AA 4

4 hits Apply

R-PSIP-T3 4

4 hits Apply

e0 1 e3 1

4 hits Apply

Manufacturer (3)

International Rectifier 2 Vishay Intertechnologies 1 Vishay Siliconix 1

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 1 175.0 °C 3

Min (°C) - Max (°C)

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Active 1 Transferred 3

4 hits Apply

No 1

4 hits Apply

260 1 NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

190 W 3

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply