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IRFSL9N60APBF
Vishay Intertechnologies
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$1.6258 | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 9.2 A | 750 mΩ | 290 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 37 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | Not Qualified | 150 °C | NOT SPECIFIED | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | compliant | EAR99 | Vishay | |||||
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IRFSL9N60APBF
Vishay Siliconix
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$2.0934 | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 9.2 A | 750 mΩ | 290 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | unknown | EAR99 | Vishay | |||||||
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IRFSL9N60ATRL
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 9.2 A | 750 mΩ | 290 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | compliant | EAR99 | ||||||||
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IRFSL9N60ATRRPBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 9.2 A | 750 mΩ | 290 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | compliant | EAR99 | |||||||
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IRFSL9N60ATRR
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 9.2 A | 750 mΩ | 290 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | compliant | EAR99 | ||||||||
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IRFSL9N60A
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 9.2 A | 750 mΩ | 290 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 37 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | compliant | EAR99 | ||||||
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IRFSL9N60APBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 9.2 A | 750 mΩ | 290 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 37 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | not_compliant | EAR99 | |||
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IRFSL9N60ATRLPBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 9.2 A | 750 mΩ | 290 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | compliant | EAR99 |