Parametric results for: IRFSL9N60A under Power Field-Effect Transistors

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Manufacturer Part Number: irfsl9n60a
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IRFSL9N60APBF
Vishay Intertechnologies
$1.6258 Yes Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 9.2 A 750 mΩ 290 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 37 A SWITCHING SILICON TO-262AA R-PSIP-T3 Not Qualified 150 °C NOT SPECIFIED 40 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC TO-262AA IN-LINE, R-PSIP-T3 3 compliant EAR99 Vishay
IRFSL9N60APBF
Vishay Siliconix
$2.0934 Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 9.2 A 750 mΩ 290 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 37 A SWITCHING SILICON TO-262AA R-PSIP-T3 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE VISHAY SILICONIX TO-262AA IN-LINE, R-PSIP-T3 3 unknown EAR99 Vishay
IRFSL9N60ATRL
International Rectifier
Check for Price No No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 9.2 A 750 mΩ 290 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 37 A SWITCHING SILICON TO-262AA R-PSIP-T3 e0 Not Qualified DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP TO-262AA IN-LINE, R-PSIP-T3 3 compliant EAR99
IRFSL9N60ATRRPBF
International Rectifier
Check for Price Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 9.2 A 750 mΩ 290 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 37 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 Not Qualified 1 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN OVER NICKEL THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP TO-262AA IN-LINE, R-PSIP-T3 3 compliant EAR99
IRFSL9N60ATRR
International Rectifier
Check for Price No No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 9.2 A 750 mΩ 290 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 37 A SWITCHING SILICON TO-262AA R-PSIP-T3 e0 Not Qualified DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP TO-262AA IN-LINE, R-PSIP-T3 3 compliant EAR99
IRFSL9N60A
International Rectifier
Check for Price No No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 9.2 A 750 mΩ 290 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 37 A SWITCHING SILICON TO-262AA R-PSIP-T3 e0 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE TIN LEAD THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP TO-262AA IN-LINE, R-PSIP-T3 3 compliant EAR99
IRFSL9N60APBF
International Rectifier
Check for Price Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 9.2 A 750 mΩ 290 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 37 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN OVER NICKEL THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP TO-262AA IN-LINE, R-PSIP-T3 3 not_compliant EAR99
IRFSL9N60ATRLPBF
International Rectifier
Check for Price Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 600 V 1 9.2 A 750 mΩ 290 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 37 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 Not Qualified 1 DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN OVER NICKEL THROUGH-HOLE SINGLE INTERNATIONAL RECTIFIER CORP TO-262AA IN-LINE, R-PSIP-T3 3 compliant EAR99