Findchips: Parametric Search Results for IRFU024

Parametric results for: IRFU024 under Power Field-Effect Transistors

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		IRFU024PBF Vishay Intertechnologies
		IRFU024NPBF Infineon Technologies AG
		IRFU024NPBF International Rectifier
		IRFU024PBF Vishay Siliconix
		IRFU024N International Rectifier
		IRFU024 International Rectifier
		IRFU024A Samsung Semiconductor
		IRFU024PBF International Rectifier
		IRFU024A Fairchild Semiconductor Corporation
		AUIRFU024N Infineon Technologies AG

				Most Relevant								Technical									Compliance				Operating Conditions				Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Additional Feature	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation Ambient-Max	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Reach Compliance Code	ECCN Code	Samacsys Manufacturer	Part Package Code	Package Description	Pin Count	HTS Code

$0.6763

Yes

Active

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

60 V

14 A

100 mΩ

91 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

56 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

150 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

SINGLE

VISHAY INTERTECHNOLOGY INC

compliant

EAR99

Vishay

$0.7131

Yes

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

17 A

75 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

71 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

68 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

INFINEON TECHNOLOGIES AG

not_compliant

EAR99

Infineon

$0.7700

Yes

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

17 A

75 mΩ

AVALANCHE RATED

71 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

38 W

45 W

68 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

not_compliant

EAR99

TO-251AA

IPAK-3

8541.29.00.95

$1.3324

Yes

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

60 V

14 A

100 mΩ

91 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

56 A

SWITCHING

SILICON

TO-251

R-PSIP-T3

Not Qualified

150 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

VISHAY SILICONIX

unknown

EAR99

Vishay

TO-251

ROHS COMPLIANT, IPAK-3

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

17 A

75 mΩ

AVALANCHE RATED

71 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

38 W

68 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

TO-251AA

IN-LINE, R-PSIP-T3

8541.29.00.95

Check for Price

Transferred

N-CHANNEL

SINGLE

60 V

14 A

100 mΩ

91 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

56 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

150 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

8541.29.00.95

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

60 V

15 A

70 mΩ

154 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

30 W

60 A

SWITCHING

SILICON

R-PSIP-T3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

IN-LINE, R-PSIP-T3

Check for Price

Yes

Transferred

N-CHANNEL

SINGLE

60 V

14 A

100 mΩ

91 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

56 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

150 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

8541.29.00.95

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

60 V

15 A

70 mΩ

154 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

30 W

60 A

SWITCHING

SILICON

R-PSIP-T3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

compliant

EAR99

IPAK-3

Check for Price

Yes

Active

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

17 A

75 mΩ

AVALANCHE RATED, HIGH RELIABILITY

71 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

45 W

68 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

INFINEON TECHNOLOGIES AG

compliant

EAR99

IPAK-3

1 2 Next

Compare

IRFU024PBF

Vishay Intertechnologies

$0.6763

Yes

Active

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

60 V

14 A

100 mΩ

91 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

56 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

150 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

SINGLE

VISHAY INTERTECHNOLOGY INC

compliant

EAR99

Vishay

IRFU024NPBF

Infineon Technologies AG

$0.7131

Yes

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

17 A

75 mΩ

AVALANCHE RATED, ULTRA-LOW RESISTANCE

71 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

68 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

INFINEON TECHNOLOGIES AG

not_compliant

EAR99

Infineon

IRFU024NPBF

International Rectifier

$0.7700

Yes

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

17 A

75 mΩ

AVALANCHE RATED

71 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

38 W

45 W

68 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

not_compliant

EAR99

TO-251AA

IPAK-3

8541.29.00.95

IRFU024PBF

Vishay Siliconix

$1.3324

Yes

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

60 V

14 A

100 mΩ

91 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

56 A

SWITCHING

SILICON

TO-251

R-PSIP-T3

Not Qualified

150 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

VISHAY SILICONIX

unknown

EAR99

Vishay

TO-251

ROHS COMPLIANT, IPAK-3

IRFU024N

International Rectifier

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

17 A

75 mΩ

AVALANCHE RATED

71 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

38 W

68 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

TO-251AA

IN-LINE, R-PSIP-T3

8541.29.00.95

IRFU024

International Rectifier

Check for Price

Transferred

N-CHANNEL

SINGLE

60 V

14 A

100 mΩ

91 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

56 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

150 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

8541.29.00.95

IRFU024A

Samsung Semiconductor

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

60 V

15 A

70 mΩ

154 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

30 W

60 A

SWITCHING

SILICON

R-PSIP-T3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

SAMSUNG SEMICONDUCTOR INC

unknown

EAR99

IN-LINE, R-PSIP-T3

IRFU024PBF

International Rectifier

Check for Price

Yes

Transferred

N-CHANNEL

SINGLE

60 V

14 A

100 mΩ

91 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

42 W

56 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

150 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

INTERNATIONAL RECTIFIER CORP

compliant

EAR99

8541.29.00.95

IRFU024A

Fairchild Semiconductor Corporation

Check for Price

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

60 V

15 A

70 mΩ

154 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

30 W

60 A

SWITCHING

SILICON

R-PSIP-T3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

compliant

EAR99

IPAK-3

AUIRFU024N

Infineon Technologies AG

Check for Price

Yes

Active

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

55 V

17 A

75 mΩ

AVALANCHE RATED, HIGH RELIABILITY

71 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

45 W

68 A

SWITCHING

SILICON

TO-251AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

INFINEON TECHNOLOGIES AG

compliant

EAR99

IPAK-3

1 2 Next