Parametric results for: IRFU6215 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4

4 hits Apply

310.0 mJ 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

150 V 4

4 hits Apply

Drain Current-Max (ID) (1)

13 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

295 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-251AA 4

4 hits Apply

R-PSIP-T3 4

4 hits Apply

e0 2 e3 2

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 3

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

IN-LINE 4

4 hits Apply

Obsolete 2 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

260 2 NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

110 W 3

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply