Filter Your Search
1 - 10 of 469 results
|
IRFZ24NPBF
Infineon Technologies AG
|
$0.3077 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 17 A | 70 mΩ | AVALANCHE RATED | 71 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 68 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||||
|
IRFZ20PBF
Vishay Intertechnologies
|
$0.7472 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 15 A | 100 mΩ | ULTRA LOW-ON RESISTANCE | 5 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 40 W | 60 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | compliant | EAR99 | Vishay | |||||||||||
|
IRFZ24PBF
Vishay Intertechnologies
|
$0.7943 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 17 A | 100 mΩ | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 68 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | compliant | EAR99 | Vishay | |||||||||||
|
IRFZ24PBF
Vishay Siliconix
|
$0.8871 | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 17 A | 100 mΩ | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 68 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | unknown | EAR99 | Vishay | TO-220AB | FLANGE MOUNT, R-PSFM-T3 | 3 | |||||||
|
AUIRFZ24NSTRL
Infineon Technologies AG
|
$1.0783 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 17 A | 70 mΩ | AVALANCHE RATED | 71 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 68 A | SWITCHING | SILICON | TO-263AB | R-PDSO-G2 | e3 | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | D2PAK-3 | ||||||||
|
IRFZ24NLPBF
International Rectifier
|
$1.1410 | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 17 A | 70 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 71 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 45 W | 68 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | not_compliant | EAR99 | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | 8541.29.00.95 | ||||
|
AUIRFZ24NS
Infineon Technologies AG
|
$1.1704 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 17 A | 70 mΩ | AVALANCHE RATED | 71 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 68 A | SWITCHING | SILICON | TO-263AB | R-PDSO-G2 | e3 | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | D2PAK-3 | ||||||||
|
IRFZ20PBF
Vishay Siliconix
|
$1.1891 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 15 A | 100 mΩ | ULTRA LOW-ON RESISTANCE | 5 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 40 W | 60 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | unknown | EAR99 | Vishay | TO-220AB | FLANGE MOUNT, R-PSFM-T3 | 3 | ||||||||
|
IRFZ24SPBF
Vishay Siliconix
|
$1.7453 | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 17 A | 100 mΩ | ULTRA-LOW RESISTANCE | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 68 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | Not Qualified | 175 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | VISHAY SILICONIX | compliant | EAR99 | Vishay | D2PAK | ROHS COMPLIANT, TO-263, D2PAK-3 | 4 | |||||||||
|
IRFZ24N
Infineon Technologies AG
|
$2.6587 | No | Active | N-CHANNEL | NO | SINGLE | 3 | 55 V | 1 | 17 A | 70 mΩ | AVALANCHE RATED | 71 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 45 W | 68 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | TO-220AB, 3 PIN | 8541.29.00.95 |