Parametric results for: IRFZ44N under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, ULTRA LOW ON-RESISTANCE, HIGH RELIABILITY 1

8 hits Apply

150.0 mJ 3

8 hits Apply

DRAIN 3

8 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 3

8 hits Apply

DS Breakdown Voltage-Min (1)

55 V 4

8 hits Apply

Drain Current-Max (ID) (1)

49 A 6

8 hits Apply

Drain-source On Resistance-Max (1)

17.5 mΩ 3

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

8 hits Apply

TO-220AB 1 TO-262AA 1

8 hits Apply

R-PSFM-T3 1 R-PSIP-T3 1 R-PSSO-G2 1

8 hits Apply

e0 1 e3 1

8 hits Apply

Manufacturer (5)

Inchange Semiconductor Company Ltd 1 International Rectifier 1 New Jersey Semiconductor Products Inc 1 Philips Semiconductors 2 Transys Electronics Limited 3

8 hits Apply

Number of Elements (1)

1 6

8 hits Apply

Number of Terminals (2)

2 1 3 2

8 hits Apply

ENHANCEMENT MODE 6

8 hits Apply

175.0 °C 2

8 hits Apply

-55.0 °C 2

8 hits Apply

PLASTIC/EPOXY 3

8 hits Apply

RECTANGULAR 3

8 hits Apply

FLANGE MOUNT 1 IN-LINE 1 SMALL OUTLINE 1

8 hits Apply

Active 1 Contact Manufacturer 4 Obsolete 1 Transferred 2

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

8 hits Apply

110 W 2

8 hits Apply

Surface Mount (2)

NO 3 YES 2

8 hits Apply