Parametric results for: IRHE54034 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

87.0 mJ 3

3 hits Apply

SOURCE 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

3 hits Apply

Drain Current-Max (ID) (1)

11.7 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

80 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-CQCC-N15 3

3 hits Apply

e0 1

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

15 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

CHIP CARRIER 3

3 hits Apply

Active 2 Transferred 1

3 hits Apply

Yes 1

3 hits Apply

260 1 NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

25 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply