Parametric results for: IRHLG77214SCS under Small Signal Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

50.4 mJ 2

2 hits Apply

Configuration (1)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

250 V 2

2 hits Apply

Drain Current-Max (ID) (1)

800 mA 2

2 hits Apply

Drain-source On Resistance-Max (1)

1.1 Ω 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

MO-036AB 2

2 hits Apply

R-PDIP-T14 2

2 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

4 2

2 hits Apply

Number of Terminals (1)

14 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

IN-LINE 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

No 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

1.4 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply