Parametric results for: IRHM3064 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

500.0 mJ 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 6

6 hits Apply

Drain Current-Max (ID) (1)

35 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

21 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-254AA 2

6 hits Apply

S-CSFM-P3 6

6 hits Apply

e0 3

6 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 5

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 6

6 hits Apply

SQUARE 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

Active 1 Obsolete 5

6 hits Apply

No 2 Yes 3

6 hits Apply

260 3

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

250 W 1

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply