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IRHMJ57260SEPBF
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 35 A | 49 mΩ | 320 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 A | SWITCHING | SILICON | R-XSSO-G3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-XSSO-G3 | compliant | EAR99 | |||||||||
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IRHMJ57260SE
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 35 A | 49 mΩ | 320 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 208 W | 140 A | SWITCHING | SILICON | R-XSSO-G3 | e0 | Not Qualified | 150 °C | ISOLATED | UNSPECIFIED | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, TABLESS TO-254AA, 3 PIN | not_compliant | EAR99 | |||||||
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IRHMJ57260SEPBF
International Rectifier
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 35 A | 49 mΩ | 320 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 A | SWITCHING | SILICON | R-XSSO-G3 | Not Qualified | 150 °C | 260 | 40 | ISOLATED | UNSPECIFIED | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | SMALL OUTLINE, R-XSSO-G3 | compliant | EAR99 | TO-254AA | 3 | |||||
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IRHMJ57260SE
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 35 A | 49 mΩ | 320 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 208 W | 140 A | SWITCHING | SILICON | R-XSSO-G3 | e0 | Not Qualified | 150 °C | ISOLATED | UNSPECIFIED | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | SMALL OUTLINE, R-XSSO-G3 | compliant | EAR99 | TO-254AA | 3 |