Parametric results for: IRHNA54260 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 4

4 hits Apply

380.0 mJ 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

200 V 4

4 hits Apply

Drain Current-Max (ID) (1)

55 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

43 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-CBCC-N3 4

4 hits Apply

e0 2

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

CHIP CARRIER 4

4 hits Apply

Active 1 Obsolete 1 Transferred 2

4 hits Apply

No 1 Yes 1

4 hits Apply

260 1 NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

300 W 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply