Parametric results for: IRHNA67160 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

462.0 mJ 5

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

100 V 5

5 hits Apply

Drain Current-Max (ID) (1)

56 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

10 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-CBCC-N3 5

5 hits Apply

e0 2

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 3 International Rectifier 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 3

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

CHIP CARRIER 5

5 hits Apply

Active 3 Transferred 2

5 hits Apply

No 1 Yes 1

5 hits Apply

260 2 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

250 W 2

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply