Parametric results for: IRHYB63134CM under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

67.0 mJ 4

4 hits Apply

ISOLATED 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

150 V 4

4 hits Apply

Drain Current-Max (ID) (1)

19 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

90 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-257AA 4

4 hits Apply

R-XSFM-P3 4

4 hits Apply

e0 1

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2 175.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

UNSPECIFIED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 2 Transferred 2

4 hits Apply

No 1 Yes 1

4 hits Apply

260 1 NOT SPECIFIED 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

75 W 1

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply