Parametric results for: IRL540NS under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, FAST SWITCHING 2 AVALANCHE RATED, HIGH RELIABILITY 6 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY 1 HIGH RELIABILITY 2

11 hits Apply

310.0 mJ 11

11 hits Apply

DRAIN 11

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

11 hits Apply

DS Breakdown Voltage-Min (1)

100 V 11

11 hits Apply

Drain Current-Max (ID) (1)

36 A 11

11 hits Apply

Drain-source On Resistance-Max (1)

53 mΩ 11

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

R-PSSO-G2 11

11 hits Apply

e0 5 e3 6

11 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 International Rectifier 7

11 hits Apply

1 10

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

2 11

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

175.0 °C 7

11 hits Apply

PLASTIC/EPOXY 11

11 hits Apply

RECTANGULAR 11

11 hits Apply

SMALL OUTLINE 11

11 hits Apply

Active 2 Obsolete 4 Transferred 5

11 hits Apply

No 2 Yes 3

11 hits Apply

225 2 260 6

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

140 W 3

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply