Parametric results for: IRLD110PBF under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

LOGIC LEVEL COMPATIBLE 1

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

3 hits Apply

Drain Current-Max (ID) (2)

1 mA 1 1 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

540 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-PDIP-T3 2

3 hits Apply

e3 3

3 hits Apply

Manufacturer (3)

International Rectifier 1 Vishay Intertechnologies 1 Vishay Siliconix 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

175.0 °C 1

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

IN-LINE 2

3 hits Apply

End Of Life 1 Transferred 2

3 hits Apply

Yes 2

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

1.3 W 1

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply