Parametric results for: IRLML5103 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 6 HIGH RELIABILITY, ULTRA-LOW RESISTANCE 1 LOGIC LEVEL COMPATIBLE 4

14 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 11

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DS Breakdown Voltage-Min (1)

30 V 11

14 hits Apply

Drain Current-Max (ID) (2)

540 mA 1 760 mA 12

Min (A) - Max (A)

14 hits Apply

Drain-source On Resistance-Max (1)

600 mΩ 11

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

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TO-236AB 6

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R-PDSO-G3 11

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e0 3 e3 9

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Manufacturer (2)

Infineon Technologies AG 6 International Rectifier 8

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1 10

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Number of Elements (1)

1 13

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Number of Terminals (1)

3 11

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ENHANCEMENT MODE 12

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150.0 °C 9 175.0 °C 2

Min (°C) - Max (°C)

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-55.0 °C 2

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PLASTIC/EPOXY 11

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RECTANGULAR 11

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SMALL OUTLINE 11

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Active 3 Obsolete 5 Transferred 6

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No 3 Yes 4

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245 1 260 9

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Polarity/Channel Type (2)

N-CHANNEL 1 P-CHANNEL 12

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340 mW 2

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280 mW 5 540 mW 6

Min (W) - Max (W)

14 hits Apply

Surface Mount (1)

YES 13

14 hits Apply