Parametric results for: IRLMS6802 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

31.0 mJ 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

20 V 5

5 hits Apply

Drain Current-Max (ID) (1)

5.6 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G6 5

5 hits Apply

e0 2 e3 3

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 4

5 hits Apply

1 3 2 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

6 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 2

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 1 Obsolete 3 Transferred 1

5 hits Apply

No 1 Yes 1

5 hits Apply

260 3

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

5 hits Apply

2 W 2

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply