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IRLU110PBF
Vishay Intertechnologies
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$0.2883 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 4.3 A | 540 mΩ | AVALANCHE RATED | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 17 A | SWITCHING | SILICON | TO-251 | R-PSIP-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | VISHAY INTERTECHNOLOGY INC | compliant | EAR99 | Vishay | ||||||||||||
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IRLU110PBF
Vishay Siliconix
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$1.0106 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 4.3 A | 540 mΩ | AVALANCHE RATED | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 17 A | SWITCHING | SILICON | TO-251 | R-PSIP-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | VISHAY SILICONIX | unknown | EAR99 | Vishay | TO-251 | IN-LINE, R-PSIP-T3 | 3 | |||||||||
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IRLU110PBF
Infineon Technologies AG
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 4.6 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 175 °C | INFINEON TECHNOLOGIES AG | unknown | EAR99 | ||||||||||||||||||||||||||||||||
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IRLU110
Samsung Semiconductor
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 4 A | 750 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 30 W | 25 W | 16 A | SWITCHING | SILICON | 45 ns | 45 ns | R-PSIP-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | IN-LINE, R-PSIP-T3 | 3 | 8541.29.00.95 | |||||||||||||
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IRLU110
International Rectifier
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 4.3 A | 540 mΩ | LOGIC LEVEL COMPATIBLE | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 25 W | 17 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | unknown | EAR99 | TO-251AA | IN-LINE, R-PSIP-T3 | 3 | 8541.29.00.95 | ||||||||
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IRLU110ATU
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 4.7 A | 440 mΩ | 58 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 22 W | 16 A | SWITCHING | SILICON | TO-251 | R-PSIP-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | not_compliant | EAR99 | TO-251 | IPAK-3 | 3 | ||||||||||||
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IRLU110PBF
International Rectifier
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Check for Price | Yes | Transferred | N-CHANNEL | NO | SINGLE | 1 | 4.6 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 175 °C | INTERNATIONAL RECTIFIER CORP | unknown | EAR99 | ||||||||||||||||||||||||||||||||
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IRLU110A
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 4.7 A | 440 mΩ | 58 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 22 W | 16 A | SWITCHING | SILICON | TO-251 | R-PSIP-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | unknown | EAR99 | TO-251 | IN-LINE, R-PSIP-T3 | 3 | ||||||||||||
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IRLU110
Thomson Consumer Electronics
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 4.6 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | e0 | 175 °C | Tin/Lead (Sn/Pb) | THOMSON CONSUMER ELECTRONICS | unknown | EAR99 | , | |||||||||||||||||||||||||||||
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IRLU110A
Samsung Semiconductor
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 4.7 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 22 W | 150 °C | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | , |