Parametric results for: IRLU4343-701TR under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

HIGH RELIABILITY 12

12 hits Apply

160.0 mJ 12

12 hits Apply

DRAIN 12

12 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 12

12 hits Apply

DS Breakdown Voltage-Min (1)

55 V 12

12 hits Apply

Drain Current-Max (ID) (1)

26 A 12

12 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 12

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

R-PSSO-G3 12

12 hits Apply

e0 3 e3 6

12 hits Apply

Manufacturer (2)

Infineon Technologies AG 6 International Rectifier 6

12 hits Apply

1 6

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

3 12

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

175.0 °C 9

12 hits Apply

PLASTIC/EPOXY 12

12 hits Apply

RECTANGULAR 12

12 hits Apply

SMALL OUTLINE 12

12 hits Apply

Active 6 Obsolete 3 Transferred 3

12 hits Apply

No 3 Yes 3

12 hits Apply

NOT SPECIFIED 3

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply