Parametric results for: ISL9N308AS3ST under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 5

5 hits Apply

Drain Current-Max (ID) (1)

75 A 5

5 hits Apply

Drain-source On Resistance-Max (2)

8 mΩ 3 12 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-263AB 5

5 hits Apply

R-PSSO-G2 5

5 hits Apply

e3 1

5 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 4 Intersil Corporation 1

5 hits Apply

1 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 4

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

100 W 1

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply