Parametric results for: ITC1100 under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BASE 1

4 hits Apply

Collector Current-Max (IC) (1)

80 A 3

4 hits Apply

Collector-Emitter Voltage-Max (2)

30 V 1 65 V 2

Min (V) - Max (V)

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DC Current Gain-Min (hFE) (1)

20.0 2

4 hits Apply

Highest Frequency Band (1)

L BAND 3

4 hits Apply

R-CDFM-F2 1 R-CDFM-F3 2

4 hits Apply

e0 1

4 hits Apply

Manufacturer (3)

Advanced Power Technology 1 GHz Technology Inc 1 Microsemi Corporation 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

2 1 3 2

4 hits Apply

200.0 °C 2

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLANGE MOUNT 3

4 hits Apply

Obsolete 1 Transferred 3

4 hits Apply

No 1

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

3.4 kW 1

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply