Parametric results for: IXFNB24N100 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Fall Time-Max (tf) Feedback Cap-Max (Crss) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 203

292 hits Apply

1000.0 mJ 4 1500.0 mJ 7 2000.0 mJ 31 2300.0 mJ 1 2500.0 mJ 19 3000.0 mJ 37 3400.0 mJ 2 3500.0 mJ 8 4000.0 mJ 30 5000.0 mJ 36 6000.0 mJ 4

Min (mJ) - Max (mJ)

292 hits Apply

DRAIN 27 ISOLATED 198

292 hits Apply

Collector Current-Max (IC) (1)

80 A 1

292 hits Apply

Collector-Emitter Voltage-Max (1)

600 V 1

292 hits Apply

Configuration (3)

SINGLE 12 SINGLE WITH BUILT-IN DIODE 228 SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR 1

292 hits Apply

DS Breakdown Voltage-Min (21)

60 V 2 70 V 5 75 V 1 85 V 1 100 V 18 150 V 8 170 V 3 200 V 17 250 V 7 300 V 17 480 V 1 500 V 43 550 V 4 600 V 23 650 V 2 800 V 23 850 V 1 900 V 11 1 kV 23 1.1 kV 5 1.2 kV 14

Min (V) - Max (V)

292 hits Apply

Drain Current-Max (ID) (50)

15 A 2 17 A 2 20 A 4 21 A 2 22 A 2 23 A 6 24 A 4 25 A 3 27 A 6 28 A 2 29 A 2 30 A 2 32 A 5 33 A 2 34 A 6 35 A 3 36 A 5 37 A 4 38 A 7 39 A 3 40 A 3 43 A 3 44 A 10 48 A 10 49 A 2 50 A 12 53 A 2 55 A 3 56 A 2 61 A 3 63 A 2 64 A 2 66 A 7 70 A 2 72 A 2 73 A 4 75 A 2 80 A 4 82 A 3 88 A 2 90 A 5 100 A 9 106 A 2 110 A 3 120 A 4 130 A 3 150 A 5 180 A 4 200 A 5 240 A 3

Min (A) - Max (A)

292 hits Apply

Drain-source On Resistance-Max (50)

2.3 mΩ 2 2.6 mΩ 2 4 mΩ 3 4.6 mΩ 2 5.2 mΩ 4 5.5 mΩ 2 6 mΩ 5 7.5 mΩ 5 10 mΩ 2 10.5 mΩ 2 11 mΩ 2 12 mΩ 2 12.5 mΩ 6 12.9 mΩ 2 17 mΩ 3 18 mΩ 4 19 mΩ 2 20 mΩ 3 22 mΩ 2 23 mΩ 2 24 mΩ 3 33 mΩ 3 45 mΩ 5 49 mΩ 3 56 mΩ 2 60 mΩ 2 65 mΩ 5 72 mΩ 2 75 mΩ 4 80 mΩ 5 85 mΩ 9 96 mΩ 2 100 mΩ 7 110 mΩ 2 120 mΩ 6 130 mΩ 2 135 mΩ 2 140 mΩ 6 150 mΩ 3 190 mΩ 4 210 mΩ 4 220 mΩ 5 240 mΩ 3 250 mΩ 4 260 mΩ 3 300 mΩ 3 320 mΩ 6 350 mΩ 4 390 mΩ 4 550 mΩ 5

Min (Ω) - Max (Ω)

292 hits Apply

METAL-OXIDE SEMICONDUCTOR 244

292 hits Apply

110 ns 1

292 hits Apply

1.5 pF 1 1.6 pF 1 2.6 pF 1 3.2 pF 1 5 pF 1 5.5 pF 1 7.7 pF 2 8 pF 1 9 pF 1 15 pF 1 42 pF 1 45 pF 1 47 pF 1 48 pF 1 60 pF 1 67 pF 1 95 pF 1 100 pF 1 115 pF 1 120 pF 2 140 pF 1 142 pF 1 185 pF 1 270 pF 1 400 pF 1 410 pF 1 530 pF 1 600 pF 1 665 pF 1 2.75 nF 1

Min (pF) - Max (pF)

292 hits Apply

Gate-Emitter Thr Voltage-Max (1)

5.5 V 1

292 hits Apply

20 V 1

292 hits Apply

R-PSIP-T3 2 R-PUFM-D4 3 R-PUFM-X4 209 R-XUFM-X4 16

292 hits Apply

e1 1 e3 2

292 hits Apply

Manufacturer (2)

IXYS Corporation 169 Littelfuse Inc 123

292 hits Apply

Number of Elements (1)

1 245

292 hits Apply

Number of Terminals (2)

3 2 4 228

292 hits Apply

ENHANCEMENT MODE 240

292 hits Apply

150.0 °C 206 175.0 °C 21

Min (°C) - Max (°C)

292 hits Apply

-55.0 °C 35 -40.0 °C 2

Min (°C) - Max (°C)

292 hits Apply

PLASTIC/EPOXY 214 UNSPECIFIED 16

292 hits Apply

RECTANGULAR 230

292 hits Apply

FLANGE MOUNT 228 IN-LINE 2

292 hits Apply

Active 86 Not Recommended 24 Obsolete 66 Transferred 116

292 hits Apply

Yes 120

292 hits Apply

260 1 NOT SPECIFIED 12

292 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 241

292 hits Apply

520 W 17 625 W 1

Min (W) - Max (W)

292 hits Apply

1.04 W 2 200 W 1 300 W 6 325 W 6 390 W 2 500 W 6 520 W 28 595 W 5 600 W 23 625 W 8 690 W 4 695 W 10 700 W 18 735 W 3 780 W 6 830 W 5 890 W 17 900 W 4 940 W 1 960 W 9 1 kW 7 1.07 kW 10 1.09 kW 3 1.17 kW 1 1.5 kW 5

Min (W) - Max (W)

292 hits Apply

Surface Mount (2)

NO 239 YES 1

292 hits Apply