Parametric results for: IXTA1R4N100P under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

4 hits Apply

100.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 2

4 hits Apply

Drain Current-Max (ID) (1)

1.4 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

11 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

TO-263AB 2

4 hits Apply

R-PSSO-G2 2

4 hits Apply

e3 4

4 hits Apply

Manufacturer (2)

IXYS Corporation 2 Littelfuse Inc 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

2 2

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

4 hits Apply

63 W 2

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply