Parametric results for: JAN2N6383 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 11

11 hits Apply

Collector Current-Max (IC) (2)

5 A 1 10 A 10

Min (A) - Max (A)

11 hits Apply

200 pF 1

11 hits Apply

Collector-Emitter Voltage-Max (1)

40 V 11

11 hits Apply

Configuration (2)

DARLINGTON 10 SINGLE 1

11 hits Apply

DC Current Gain-Min (hFE) (2)

100.0 10 1000.0 1

Min - Max

11 hits Apply

TO-204 1 TO-204AA 2 TO-3 8

11 hits Apply

O-MBFM-P2 11

11 hits Apply

e0 6

11 hits Apply

Manufacturer (11)

Cobham PLC 1 Cobham Semiconductor Solutions 1 Defense Logistics Agency 1 Harris Semiconductor 1 Intersil Corporation 1 MACOM 1 Microchip Technology Inc 1 Microsemi Corporation 1 New England Semiconductor 1 Silicon Transistor Corporation 1 VPT Components 1

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

2 11

11 hits Apply

175.0 °C 1 200.0 °C 1

Min (°C) - Max (°C)

11 hits Apply

-55.0 °C 1

11 hits Apply

METAL 11

11 hits Apply

ROUND 11

11 hits Apply

FLANGE MOUNT 11

11 hits Apply

Active 3 Obsolete 4 Transferred 4

11 hits Apply

No 2

11 hits Apply

NOT SPECIFIED 4

11 hits Apply

Polarity/Channel Type (1)

NPN 11

11 hits Apply

6 W 1

11 hits Apply

100 W 2

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply

Transition Frequency-Nom (fT) (1)

20 MHz 1

11 hits Apply