Parametric results for: JAN2N6661 under Small Signal Field-Effect Transistors

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Manufacturer Part Number: jan2n6661
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JAN2N6661
Vishay Siliconix
Check for Price No No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 90 V 1 860 mA 4 Ω LOW THRESHOLD 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-205AD O-MBCY-W3 e0 Not Qualified MIL 1 METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM VISHAY SILICONIX BCY CYLINDRICAL, O-MBCY-W3 2 compliant EAR99
JAN2N6661UB
VPT Components
Check for Price Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 90 V 1 860 mA 4 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 570 mW 2.5 W SWITCHING SILICON R-XDSO-N3 Qualified MIL-19500 150 °C -65 °C UNSPECIFIED RECTANGULAR SMALL OUTLINE NO LEAD DUAL VPT COMPONENTS SMALL OUTLINE, R-XDSO-N3 unknown EAR99 8541.21.00.95 2020-08-03
JAN2N6661
VPT Components
Check for Price Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 90 V 1 860 mA 4 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 725 mW 6.25 W SWITCHING SILICON TO-205AD O-MBCY-W3 Qualified MIL-19500 150 °C -65 °C DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM VPT COMPONENTS CYLINDRICAL, O-MBCY-W3 unknown EAR99 8541.21.00.95 2020-08-03
JAN2N6661
Vishay Intertechnologies
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 90 V 1 860 mA 4 Ω LOW THRESHOLD 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-205AD O-MBCY-W3 e0 Qualified MIL NOT SPECIFIED NOT SPECIFIED METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM VISHAY INTERTECHNOLOGY INC BCY CYLINDRICAL, O-MBCY-W3 2 compliant EAR99
JAN2N6661B
Temic Semiconductors
Check for Price Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 90 V 1 860 mA 4 Ω LOW THRESHOLD 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-205AD O-MBCY-W3 Not Qualified MIL METAL ROUND CYLINDRICAL WIRE BOTTOM TEMIC SEMICONDUCTORS unknown EAR99