Parametric results for: JAN2N6770 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

750.0 mJ 3

5 hits Apply

DRAIN 3 ISOLATED 1

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

500 V 4

5 hits Apply

Drain Current-Max (ID) (1)

12 A 4

5 hits Apply

Drain-source On Resistance-Max (2)

400 mΩ 3 500 mΩ 1

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

TO-204AA 3 TO-254AA 2

5 hits Apply

O-MBFM-P2 3 S-XSFM-P3 2

5 hits Apply

e0 1

5 hits Apply

Manufacturer (3)

Defense Logistics Agency 2 Microsemi Corporation 2 Unitrode Corporation 1

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (2)

2 3 3 2

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 3

5 hits Apply

-55.0 °C 3

5 hits Apply

METAL 3 UNSPECIFIED 2

5 hits Apply

ROUND 3 SQUARE 2

5 hits Apply

FLANGE MOUNT 5

5 hits Apply

Active 2 Obsolete 3

5 hits Apply

No 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

4 W 3

5 hits Apply

150 W 3

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply