Parametric results for: JANS2N6849 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

92.0 mJ 3 165.0 mJ 2

Min (mJ) - Max (mJ)

8 hits Apply

DRAIN 2 SOURCE 2

8 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

100 V 7

8 hits Apply

Drain Current-Max (ID) (1)

6.5 A 8

8 hits Apply

Drain-source On Resistance-Max (2)

300 mΩ 1 345 mΩ 4

Min (Ω) - Max (Ω)

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

TO-205AF 4 TO-39 1

8 hits Apply

O-MBCY-W3 5 R-CQCC-N14 2

8 hits Apply

e0 5

8 hits Apply

Manufacturer (5)

Harris Semiconductor 1 Infineon Technologies AG 2 International Rectifier 2 Intersil Corporation 1 Microsemi Corporation 2

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (2)

14 2 3 5

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 5

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 METAL 5

8 hits Apply

RECTANGULAR 2 ROUND 5

8 hits Apply

CHIP CARRIER 2 CYLINDRICAL 5

8 hits Apply

Active 2 Obsolete 5 Transferred 1

8 hits Apply

No 2

8 hits Apply

NOT SPECIFIED 3

8 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 8

8 hits Apply

25 W 1

8 hits Apply

25 W 5

8 hits Apply

Surface Mount (2)

NO 5 YES 3

8 hits Apply