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JANSF2N7261U
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 8 A | 240 mΩ | HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | R-CQCC-N15 | e0 | Qualified | MIL-19500/601 | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | Tin/Lead (Sn/Pb) | NO LEAD | QUAD | INFINEON TECHNOLOGIES AG | compliant | EAR99 | ||||||||||||
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JANSF2N7261U
Defense Logistics Agency
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 8 A | 240 mΩ | HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | R-CQCC-N15 | Qualified | MIL-19500/601 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | DEFENSE LOGISTICS AGENCY | unknown | EAR99 | HERMETIC SEALED, LCC-18 | |||||||||||||
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JANSF2N7261U
Microsemi Corporation
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 8 A | 350 mΩ | HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 32 A | SWITCHING | SILICON | R-XQCC-N15 | Qualified | MIL-19500/601 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | MICROSEMI CORP | compliant | EAR99 | LEADLESS PACKAGE-18 | 18 | Microsemi Corporation | |||||||||
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JANSF2N7261
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 8 A | 185 mΩ | HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Qualified | MIL-19500/601 | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | TO-39, 3 PIN | |||||||||||
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JANSF2N7261U
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 8 A | 240 mΩ | HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | R-CQCC-N15 | Qualified | MIL-19500/601 | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | HERMETIC SEALED, LCC-18 | 18 | LCC | ||||||||||
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JANSF2N72610U
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 8 A | 185 mΩ | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | R-CQCC-N15 | e0 | Not Qualified | MIL-19500/601 | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | TIN LEAD | NO LEAD | QUAD | INFINEON TECHNOLOGIES AG | compliant | EAR99 | CHIP CARRIER, R-CQCC-N15 | ||||||||||||||
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JANSF2N7261
Defense Logistics Agency
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 8 A | 185 mΩ | HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | Qualified | MIL-19500/601 | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | DEFENSE LOGISTICS AGENCY | unknown | EAR99 | HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN | ||||||||||||||
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JANSF2N7261
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 8 A | 185 mΩ | HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 32 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | MIL-19500/601 | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN | 2 | BCY | 8541.29.00.95 | ||||||||
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JANSF2N72610U
International Rectifier
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Check for Price | No | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 8 A | 185 mΩ | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | R-CQCC-N15 | e0 | Not Qualified | MIL-19500/601 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | TIN LEAD | NO LEAD | QUAD | INTERNATIONAL RECTIFIER CORP | compliant | CHIP CARRIER, R-CQCC-N15 | 18 | LCC | |||||||||
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JANSF2N7261
Microsemi Corporation
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Check for Price | No | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 8 A | 350 mΩ | HIGH RELIABILITY | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 32 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Qualified | MIL-19500/601 | DRAIN | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | MICROSEMI CORP | unknown | EAR99 | MODIFIED TO-39, 3 PIN | 2 | Microsemi Corporation | BCY |