Parametric results for: JANSG2N7262 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

RADIATION HARDENED 4

4 hits Apply

240.0 mJ 4

4 hits Apply

SOURCE 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

200 V 4

4 hits Apply

Drain Current-Max (ID) (1)

5.5 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

360 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-39 2

4 hits Apply

O-MBCY-W3 2 R-CQCC-N15 2

4 hits Apply

e0 2

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

15 2 3 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 METAL 2

4 hits Apply

RECTANGULAR 2 ROUND 2

4 hits Apply

CHIP CARRIER 2 CYLINDRICAL 2

4 hits Apply

Active 2 Transferred 2

4 hits Apply

No 2

4 hits Apply

NOT SPECIFIED 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (2)

NO 2 YES 2

4 hits Apply