Parametric results for: JANSR2N7262 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

RADIATION HARDENED 2

5 hits Apply

240.0 mJ 3

5 hits Apply

DRAIN 1 SOURCE 3

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

200 V 5

5 hits Apply

Drain Current-Max (ID) (1)

5.5 A 5

5 hits Apply

Drain-source On Resistance-Max (2)

360 mΩ 3 600 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-205AF 1 TO-39 1

5 hits Apply

O-MBCY-W3 2 R-CQCC-N15 2 R-XQCC-N15 1

5 hits Apply

e0 4

5 hits Apply

Manufacturer (3)

Defense Logistics Agency 1 Infineon Technologies AG 2 Microsemi Corporation 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (2)

15 3 3 2

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 METAL 2 UNSPECIFIED 1

5 hits Apply

RECTANGULAR 3 ROUND 2

5 hits Apply

CHIP CARRIER 3 CYLINDRICAL 2

5 hits Apply

Active 2 Obsolete 3

5 hits Apply

No 2

5 hits Apply

NOT SPECIFIED 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

Surface Mount (2)

NO 2 YES 3

5 hits Apply