Parametric results for: JANSR2N7268 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

RADIATION HARDENED 6

8 hits Apply

500.0 mJ 6

8 hits Apply

DRAIN 3 ISOLATED 5

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

100 V 8

8 hits Apply

Drain Current-Max (ID) (1)

34 A 8

8 hits Apply

Drain-source On Resistance-Max (4)

65 mΩ 2 70 mΩ 3 76 mΩ 1 132 mΩ 2

Min (Ω) - Max (Ω)

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

TO-254AA 4 TO-267AB 1

8 hits Apply

R-CBCC-N3 3 R-PDSO-N3 1 S-MSFM-P3 3 S-XSFM-P3 1

8 hits Apply

e0 4

8 hits Apply

Manufacturer (4)

Defense Logistics Agency 1 Infineon Technologies AG 2 International Rectifier 3 Microsemi Corporation 2

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

3 8

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 1

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 3 METAL 3 PLASTIC/EPOXY 1 UNSPECIFIED 1

8 hits Apply

RECTANGULAR 4 SQUARE 4

8 hits Apply

CHIP CARRIER 3 FLANGE MOUNT 4 SMALL OUTLINE 1

8 hits Apply

Active 2 Obsolete 4 Transferred 2

8 hits Apply

No 4

8 hits Apply

NOT SPECIFIED 5

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

150 W 1

8 hits Apply

Surface Mount (2)

NO 4 YES 4

8 hits Apply