Parametric results for: JANTX 1N5550 under Rectifier Diodes
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1N5550
Microsemi Corporation
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$5.4794 | No | No | Transferred | 3 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS, B PACKAGE-2 | 2 | E PACKAGE | not_compliant | EAR99 | 8541.10.00.80 | Microsemi Corporation | |||||||||||
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1N5550US
Sensitron Semiconductors
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$5.9311 | No | No | Active | 3 A | 1.2 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | GENERAL PURPOSE | 150 A | 1 | Not Qualified | O-LELF-R2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | 2 | compliant | EAR99 | 8541.10.00.80 | MELF | ||||||||||
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1N5550
Microchip Technology Inc
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$6.2319 | No | Active | 3 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, B PACKAGE-2 | compliant | |||||||||||||||||
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JAN1N5550
Microchip Technology Inc
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$6.2790 | No | Active | 5 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | POWER | 100 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/420G | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-41, 2 PIN | compliant | ||||||||||||||||||
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1N5550E3
Microchip Technology Inc
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$6.3682 | Yes | Active | 3 A | 1.2 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | O-LALF-W2 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2 | compliant | ||||||||||||||||
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1N5550/TR
Microchip Technology Inc
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$6.3682 | No | Active | 3 A | 1.2 V | 2 µs | 1 µA | SILICON | 220 V | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | GENERAL PURPOSE | 100 A | 1 | 200 V | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||||||
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JANTX1N5550
Microchip Technology Inc
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$6.7996 | No | Active | 5 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | POWER | 100 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/420G | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-41, 2 PIN | compliant | ||||||||||||||||||
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JANTX1N5550/TR
Microchip Technology Inc
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$6.9596 | Active | 5 A | 1.2 V | 2 µs | 1 µA | SILICON | 220 V | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 100 A | 1 | 200 V | O-LALF-W2 | MIL-PRF-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | ||||||||||||||||
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JAN1N5550
Microsemi Corporation
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$7.4808 | No | Transferred | 5 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | POWER | 100 A | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/420G | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | SIMILAR TO DO-41, 2 PIN | unknown | EAR99 | 8541.10.00.80 | Microsemi Corporation | |||||||||||||||
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1N5550
Semtech Corporation
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$7.6369 | No | Transferred | 3 A | 1 V | 2 µs | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 200 V | 1 | AVALANCHE | GENERAL PURPOSE | 100 A | 1 | Not Qualified | O-XALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | SEMTECH CORP | HERMETIC SEALED, G4, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.80 | SEMTECH |