Parametric results for: JANTX2N4859 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 1

11 hits Apply

GATE 7

11 hits Apply

Configuration (1)

SINGLE 10

11 hits Apply

DS Breakdown Voltage-Min (1)

30 V 9

11 hits Apply

Drain-source On Resistance-Max (1)

25 Ω 10

11 hits Apply

JUNCTION 9 METAL-OXIDE SEMICONDUCTOR 2

11 hits Apply

8 pF 6

11 hits Apply

TO-18 2 TO-206AA 4

11 hits Apply

O-MBCY-W3 8 R-XDSO-N3 2

11 hits Apply

e0 4

11 hits Apply

Manufacturer (9)

Defense Logistics Agency 1 Harris Semiconductor 1 Intersil Corporation 1 Microsemi Corporation 2 New England Semiconductor 1 Solitron Devices Inc 1 Temic Semiconductors 1 Vishay Intertechnologies 1 VPT Components 2

11 hits Apply

Number of Elements (1)

1 10

11 hits Apply

Number of Terminals (1)

3 10

11 hits Apply

DEPLETION MODE 10

11 hits Apply

175.0 °C 1 200.0 °C 6

Min (°C) - Max (°C)

11 hits Apply

-65.0 °C 2

11 hits Apply

METAL 8 UNSPECIFIED 2

11 hits Apply

RECTANGULAR 2 ROUND 8

11 hits Apply

CYLINDRICAL 8 SMALL OUTLINE 2

11 hits Apply

Active 4 Obsolete 6 Transferred 1

11 hits Apply

No 2

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NOT SPECIFIED 2

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

360 mW 1 400 mW 1

Min (W) - Max (W)

11 hits Apply

360 mW 3 1.8 W 2

Min (W) - Max (W)

11 hits Apply

Surface Mount (2)

NO 9 YES 2

11 hits Apply