Parametric results for: JANTXV2N6661UB under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

90 V 1

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Drain Current-Max (ID) (1)

860 mA 1

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Drain-source On Resistance-Max (1)

4 Ω 1

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METAL-OXIDE SEMICONDUCTOR 1

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10 pF 1

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R-XDSO-N3 1

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Manufacturer (1)

VPT Components 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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-65.0 °C 1

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UNSPECIFIED 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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570 mW 1

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2.5 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply