Parametric results for: JANTXV2N6845 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

4 hits Apply

115.0 mJ 3

4 hits Apply

SOURCE 1

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

4 hits Apply

Drain Current-Max (ID) (2)

3.5 A 1 4 A 3

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

690 mΩ 3 1.2 Ω 1

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-205AF 2 TO-39 1

4 hits Apply

O-MBCY-W3 3 R-CQCC-N15 1

4 hits Apply

e0 3

4 hits Apply

Manufacturer (3)

Defense Logistics Agency 1 Infineon Technologies AG 2 Microsemi Corporation 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

15 1 3 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 1 METAL 3

4 hits Apply

RECTANGULAR 1 ROUND 3

4 hits Apply

CHIP CARRIER 1 CYLINDRICAL 3

4 hits Apply

Active 3 Obsolete 1

4 hits Apply

No 1

4 hits Apply

NOT SPECIFIED 3

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

20 W 2

4 hits Apply

Surface Mount (2)

NO 3 YES 1

4 hits Apply