Parametric results for: L2N7002DW1T1G under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

60 V 1

2 hits Apply

Drain Current-Max (ID) (1)

115 mA 1

2 hits Apply

Drain-source On Resistance-Max (1)

7.5 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

5 pF 1

2 hits Apply

R-PDSO-G6 1

2 hits Apply

e3 1

2 hits Apply

Manufacturer (1)

LRC Leshan Radio Co Ltd 2

2 hits Apply

1 1

2 hits Apply

Number of Elements (1)

2 1

2 hits Apply

Number of Terminals (1)

6 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 2

2 hits Apply

NOT SPECIFIED 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

380 mW 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply