Parametric results for: LET9045S under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 2

2 hits Apply

SOURCE 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

80 V 2

2 hits Apply

Drain Current-Max (ID) (1)

9 A 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

2 hits Apply

R-PDSO-F2 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (1)

STMicroelectronics 2

2 hits Apply

3 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

165.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Obsolete 2

2 hits Apply

250 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

160 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply