Parametric results for: LPM2M120-030 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

ISOLATED 1

1 hit Apply

Configuration (1)

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

300 V 1

1 hit Apply

Drain Current-Max (ID) (1)

120 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

35 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-CUFM-P11 1

1 hit Apply

Manufacturer (1)

Sensitron Semiconductors 1

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1 1

1 hit Apply

Number of Elements (1)

2 1

1 hit Apply

Number of Terminals (1)

11 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

No 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply