Parametric results for: MCH6436 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ESD PROTECTED 1

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

30 V 3

6 hits Apply

Drain Current-Max (ID) (1)

6 A 5

6 hits Apply

Drain-source On Resistance-Max (1)

34 mΩ 3

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

R-PDSO-F6 2 R-XDSO-F6 1

6 hits Apply

e6 2

6 hits Apply

Manufacturer (3)

onsemi 3 SANYO Electric Co Ltd 1 SANYO Semiconductor Co Ltd 2

6 hits Apply

1 2

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

6 3

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 2 UNSPECIFIED 1

6 hits Apply

RECTANGULAR 3

6 hits Apply

SMALL OUTLINE 3

6 hits Apply

Active 1 End Of Life 2 Obsolete 1 Transferred 2

6 hits Apply

Yes 2

6 hits Apply

260 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

6 hits Apply

1.5 W 4

6 hits Apply

Surface Mount (1)

YES 5

6 hits Apply