Parametric results for: MG100G2DL1 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

ISOLATED 1

1 hit Apply

Collector Current-Max (IC) (1)

100 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

450 V 1

1 hit Apply

Configuration (1)

2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 1

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DC Current Gain-Min (hFE) (1)

100.0 1

1 hit Apply

R-PUFM-X6 1

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Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

6 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

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Polarity/Channel Type (1)

NPN 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply