Parametric results for: MG15D4GM1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration (1)

COMPLEX 1

1 hit Apply

DS Breakdown Voltage-Min (1)

250 V 1

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Drain Current-Max (ID) (1)

15 A 1

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Drain-source On Resistance-Max (1)

240 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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R-PUFM-D11 1

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Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

4 1

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Number of Terminals (1)

11 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Obsolete 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

NO 1

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