Parametric results for: MG25Q6ES50 under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH SPEED 1 HIGH SPEED SWITCHING 1

2 hits Apply

ISOLATED 2

2 hits Apply

Collector Current-Max (IC) (1)

35 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

1.2 kV 2

2 hits Apply

Configuration (1)

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE 2

2 hits Apply

300 ns 1

2 hits Apply

Gate-Emitter Thr Voltage-Max (1)

6 V 1

2 hits Apply

20 V 1

2 hits Apply

R-PDIP-P24 1 R-XUFM-X17 1

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (1)

6 2

2 hits Apply

Number of Terminals (2)

17 1 24 1

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 1 UNSPECIFIED 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 1 IN-LINE 1

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

200 W 1

2 hits Apply

200 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply