Parametric results for: MGF1952A under RF Small Signal Field-Effect Transistors

All Filters Case Connection Configuration Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

SOURCE 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

Drain Current-Max (ID) (1)

240 mA 2

2 hits Apply

METAL SEMICONDUCTOR 2

2 hits Apply

Highest Frequency Band (1)

KU BAND 2

2 hits Apply

S-CBCC-N4 1 S-CXSO-N4 1

2 hits Apply

Manufacturer (1)

Mitsubishi Electric 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

DEPLETION MODE 2

2 hits Apply

125.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

SQUARE 2

2 hits Apply

CHIP CARRIER 1 SMALL OUTLINE 1

2 hits Apply

Not Recommended 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

600 mW 2

2 hits Apply

Power Gain-Min (Gp) (2)

3.0 dB 1 5.0 dB 1

Min (dB) - Max (dB)

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply